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FZ2000R33HE4BOSA1 - FZ2000R33HE4BOSA1

FZ2000R33HE4BOSA1

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Infineon Technologies

IGBT MODULE, SINGLE SWITCH, 2 KA, 2.45 V, 150 °C, MODULE

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FZ2000R33HE4BOSA1 - FZ2000R33HE4BOSA1

FZ2000R33HE4BOSA1

Active
Infineon Technologies

IGBT MODULE, SINGLE SWITCH, 2 KA, 2.45 V, 150 °C, MODULE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFZ2000R33HE4BOSA1
Current - Collector (Ic) (Max) [Max]2000 A
Current - Collector Cutoff (Max) [Max]5 mA
IGBT TypeTrench Field Stop
InputStandard
Input Capacitance (Cies) @ Vce280 nF
Mounting TypeChassis Mount
NTC ThermistorFalse
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseModule
Power - Max [Max]4.2 mW
Supplier Device PackageAG-IHVB190-3
Vce(on) (Max) @ Vge, Ic2.2 V
Voltage - Collector Emitter Breakdown (Max)3300 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 1$ 2393.92
NewarkEach 1$ 2425.94

Description

General part information

FZ2000 Series

FZ2000R33HE4BOSA1 is a IHM-B module with Trench/Fieldstop IGBT4 and emitter controlled 4 diode. Potential applications includes motor drives, traction drives, UPS systems, medium-voltage converters, high-power converters, active frontend (energy recovery). Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068.

Documents

Technical documentation and resources