IDP09E120

Obsolete

Infineon Technologies

DIODE STD 1200V 23A PGTO22022

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Obsolete

Infineon Technologies

DIODE STD 1200V 23A PGTO22022

Technical Specifications

Parameters and characteristics for this part

Specification	IDP09E120

Current - Average Rectified (Io)	23 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	140 ns
Speed	200 mA, 500 ns
Supplier Device Package	PG-TO220-2-2
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	2.15 V

Part	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Package / Case	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Speed
Infineon Technologies IDP09E120	Standard	150 °C	-55 °C	PG-TO220-2-2	100 µA	2.15 V	Through Hole	TO-220-2	140 ns	23 A	1.2 kV	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 1200 V 23A Through Hole PG-TO220-2-2

Technical documentation and resources