1N1200A

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GeneSiC Semiconductor

DIODE GEN PURP 100V 12A DO4

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GeneSiC Semiconductor

DIODE GEN PURP 100V 12A DO4

Technical Specifications

Parameters and characteristics for this part

Specification	1N1200A

Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	200 C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Stud, DO-203AA, DO-4
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-4
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.1 V

DIODE GEN PURP 100V 12A DO4

Part	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If [Max]	Mounting Type	Speed	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Current - Reverse Leakage @ Vr	Technology
GeneSiC Semiconductor 1N1200A	12 A	1.1 V	Chassis, Stud Mount	Standard Recovery >500ns	200 mA	200 C	-65 C	DO-203AA, DO-4, Stud	100 V	DO-4	10 µA	Standard

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General part information

Diode 100 V 12A Chassis, Stud Mount DO-4

Technical documentation and resources