IPN60R2K0PFD7SATMA1

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Infineon Technologies

COOLMOS™ PFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; SOT-223 PACKAGE; 2000 MOHM; PRICE/PERFORMANCE

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IPN60R2K0PFD7SATMA1

Active

Infineon Technologies

COOLMOS™ PFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; SOT-223 PACKAGE; 2000 MOHM; PRICE/PERFORMANCE

Deep-Dive with AI

DocumentsDatasheet Manufacturer Product Page EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPN60R2K0PFD7SATMA1

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	3.8 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	134 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-261-3
Power Dissipation (Max) [Max]	6 W
Rds On (Max) @ Id, Vgs	2 Ohm
Supplier Device Package	PG-SOT223-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IPN60R2 Series

Part	Rds On (Max) @ Id, Vgs	Technology	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs (Max)	FET Type	Package / Case	Power Dissipation (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies IPN60R2K0PFD7SATMA1	2 Ohm	MOSFET (Metal Oxide)	PG-SOT223-3-1	3.8 nC	4.5 V	3 A	Surface Mount	20 V	N-Channel	TO-261-3	6 W	150 °C	-40 °C	600 V	10 V	134 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.97
		10	$ 0.61
		100	$ 0.40
		500	$ 0.31
		1000	$ 0.28
	Digi-Reel®	1	$ 0.97
		10	$ 0.61
		100	$ 0.40
		500	$ 0.31
		1000	$ 0.28
	Tape & Reel (TR)	3000	$ 0.24
		6000	$ 0.22
		9000	$ 0.21
		15000	$ 0.20

Description

General part information

IPN60R2 Series

The 600V CoolMOS™ PFD7 superjunction MOSFET (IPN60R2K0PFD7S) complements theCoolMOS™7 offering for consumer applications. The IPN60R2K0PFD7S in a SOT-223 package features RDS(on)of 2,000mOhm resulting in low switching losses. The IPN60R2K0PFD7S comes with a fast body diode ensuring a robust device and in turn reduced bill-of-material (BOM) for the customer. The industry-leading SMD package offering adds to PCB space savings and simplifies manufacturing. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency overCoolMOS™P7 and CE technologies resulting in an increase in power density by 1.8W/inch3.