BSL806NL6327HTSA1

Obsolete

Infineon Technologies

MOSFET 2N-CH 20V 2.3A TSOP6-6

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Obsolete

Infineon Technologies

MOSFET 2N-CH 20V 2.3A TSOP6-6

Technical Specifications

Parameters and characteristics for this part

Specification	BSL806NL6327HTSA1

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	2.3 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	1.7 nC
Input Capacitance (Ciss) (Max) @ Vds	259 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power - Max [Max]	500 mW
Rds On (Max) @ Id, Vgs [Max]	57 mOhm
Supplier Device Package	PG-TSOP6-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	750 mV

Part	Configuration	Technology	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Power - Max [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	FET Feature
Infineon Technologies BSL806NL6327HTSA1	2 N-Channel (Dual)	MOSFET (Metal Oxide)	2.3 A	SOT-23-6 Thin TSOT-23-6	1.7 nC	57 mOhm	Surface Mount	500 mW	PG-TSOP6-6	-55 °C	150 °C	20 V	259 pF	750 mV	Logic Level Gate

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 20V 2.3A 500mW Surface Mount PG-TSOP6-6

Technical documentation and resources

No documents available