APT58MJ50J

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Microsemi Corporation

MOSFET N-CH 500V 58A ISOTOP

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Microsemi Corporation

MOSFET N-CH 500V 58A ISOTOP

Technical Specifications

Parameters and characteristics for this part

Specification	APT58MJ50J

Current - Continuous Drain (Id) @ 25°C	58 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	340 nC
Input Capacitance (Ciss) (Max) @ Vds	13500 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max) [Max]	540 W
Rds On (Max) @ Id, Vgs	65 mOhm
Supplier Device Package	ISOTOP®
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Vgs (Max)	Supplier Device Package	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Power Dissipation (Max) [Max]	FET Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Mounting Type
Microsemi Corporation APT58MJ50J	30 V	ISOTOP®	500 V	340 nC	SOT-227-4 miniBLOC	540 W	N-Channel	MOSFET (Metal Oxide)	13500 pF	-55 °C	150 °C	58 A	5 V	10 V	65 mOhm	Chassis Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 58A (Tc) 540W (Tc) Chassis Mount ISOTOP®

Technical documentation and resources