DMT615MLFV-13
ActiveDiodes Inc
60V 1.76W 16MΩ@10V,10A 3V 1 N-CHANNEL POWERDI3333-8 MOSFETS ROHS
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DMT615MLFV-13
ActiveDiodes Inc
60V 1.76W 16MΩ@10V,10A 3V 1 N-CHANNEL POWERDI3333-8 MOSFETS ROHS
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMT615MLFV-13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 38 A |
| Current - Continuous Drain (Id) @ 25°C | 8.5 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1039 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 1.76 W |
| Rds On (Max) @ Id, Vgs [Max] | 16 mOhm |
| Supplier Device Package | PowerDI3333-8 (Type UX) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
DMT615MLFV Series
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Documents
Technical documentation and resources