UF4006 BK

Obsolete

Central Semiconductor Corp

DIODE GEN PURP 800V 1A DO41

Search across all available documentation for this part.

Obsolete

Central Semiconductor Corp

DIODE GEN PURP 800V 1A DO41

Technical Specifications

Parameters and characteristics for this part

Specification	UF4006 BK

Capacitance @ Vr, F	10 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-204AL, DO-41, Axial
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-41
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1 V

DIODE GEN PURP 800V 1A DO41

Part	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Package / Case	Technology	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Supplier Device Package
Central Semiconductor Corp UF4006 BK	75 ns	10 pF	Axial, DO-204AL, DO-41	Standard	200 mA, 500 ns	150 °C	-65 C	Through Hole	1 V	800 V	10 µA	1 A	DO-41

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 800 V 1A Through Hole DO-41

Technical documentation and resources