AOB095A60L

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 38A TO263

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 38A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	AOB095A60L

Current - Continuous Drain (Id) @ 25°C	38 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	78 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	378 W
Rds On (Max) @ Id, Vgs [Max]	95 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Mounting Type	FET Type	Technology	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Supplier Device Package	Package / Case
Alpha & Omega Semiconductor Inc. AOB095A60L	Surface Mount	N-Channel	MOSFET (Metal Oxide)	95 mOhm	20 V	78 nC	10 V	600 V	38 A	3 V	-55 °C	150 °C	378 W	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 38A (Tc) 378W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources