STFU14N80K5

Active

STMicroelectronics

N-CHANNEL 800 V, 0.400 OHM TYP., 12 A MDMESH K5 POWER MOSFET IN A TO-220FP ULTRA NARROW LEADS PACKAGE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

STFU14N80K5

Active

STMicroelectronics

N-CHANNEL 800 V, 0.400 OHM TYP., 12 A MDMESH K5 POWER MOSFET IN A TO-220FP ULTRA NARROW LEADS PACKAGE

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STFU14N80K5

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	620 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs	445 mOhm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

STFU14N80K5 Series

N-channel 800 V, 0.400 Ohm typ., 12 A MDmesh K5 Power MOSFET in a TO-220FP ultra narrow leads package

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Mounting Type	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics STFU14N80K5	12 A	620 pF	30 V	5 V	-55 °C	150 °C	800 V	22 nC	N-Channel	Through Hole	TO-220-3 Full Pack	TO-220FP	445 mOhm	MOSFET (Metal Oxide)	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1000	$ 1.84

Description

General part information

STFU14N80K5 Series

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Documents

Technical documentation and resources