IPP032N06N3GXKSA1

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Infineon Technologies

MOSFET N-CH 60V 120A TO220-3

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Infineon Technologies

MOSFET N-CH 60V 120A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPP032N06N3GXKSA1

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	165 nC
Input Capacitance (Ciss) (Max) @ Vds	13000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	188 W
Rds On (Max) @ Id, Vgs	3.2 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	FET Type	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs
Infineon Technologies IPP032N06N3GXKSA1	60 V	13000 pF	188 W	10 V	20 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	N-Channel	Through Hole	TO-220-3	4 V	PG-TO220-3	120 A	165 nC	3.2 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 120A (Tc) 188W (Tc) Through Hole PG-TO220-3

Technical documentation and resources

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