IXFC36N50P

Obsolete

IXYS

MOSFET N-CH 500V 19A ISOPLUS220

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Obsolete

IXYS

MOSFET N-CH 500V 19A ISOPLUS220

Technical Specifications

Parameters and characteristics for this part

Specification	IXFC36N50P

Current - Continuous Drain (Id) @ 25°C	19 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	93 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	5500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	ISOPLUS220™
Power Dissipation (Max)	156 W
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	ISOPLUS220™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Technology	Mounting Type	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Vgs (Max)
IXYS IXFC36N50P	19 A	ISOPLUS220™	-55 °C	150 °C	156 W	10 V	500 V	MOSFET (Metal Oxide)	Through Hole	N-Channel	5500 pF	190 mOhm	5 V	93 nC	ISOPLUS220™	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 19A (Tc) 156W (Tc) Through Hole ISOPLUS220™

Technical documentation and resources

No documents available