CP710V-MPSA92-CT

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Central Semiconductor Corp

POWER BIPOLAR TRANSISTOR

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Central Semiconductor Corp

POWER BIPOLAR TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	CP710V-MPSA92-CT

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	250 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	25
Frequency - Transition	50 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	Die
Supplier Device Package	Die
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	300 V

Part	Package / Case	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Frequency - Transition	Transistor Type	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature [Max]	Operating Temperature [Min]
Central Semiconductor Corp CP710V-MPSA92-CT	Die	250 nA	Die	50 MHz	PNP	500 mA	500 mV	Surface Mount	25	300 V	150 °C	-65 °C
Central Semiconductor Corp CP710V-MPSA92-CT20	Die	250 nA	Die	50 MHz	PNP	500 mA	500 mV	Surface Mount	25	300 V	150 °C	-65 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 300 V 500 mA 50MHz Surface Mount Die

Technical documentation and resources

No documents available