SPB160N04S203CTMA1

Obsolete

Infineon Technologies

MOSFET N-CH 40V 160A TO263-7

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Obsolete

Infineon Technologies

MOSFET N-CH 40V 160A TO263-7

Technical Specifications

Parameters and characteristics for this part

Specification	SPB160N04S203CTMA1

Current - Continuous Drain (Id) @ 25°C	160 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	170 nC
Input Capacitance (Ciss) (Max) @ Vds	7320 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-7, D2PAK
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	2.9 mOhm
Supplier Device Package	PG-TO263-7-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Supplier Device Package	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Technology	Rds On (Max) @ Id, Vgs
Infineon Technologies SPB160N04S203CTMA1	4 V	N-Channel	-55 °C	175 ░C	7320 pF	Surface Mount	PG-TO263-7-3	D2PAK TO-263-7	10 V	170 nC	20 V	160 A	40 V	300 W	MOSFET (Metal Oxide)	2.9 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 40 V 160A (Tc) 300W (Tc) Surface Mount PG-TO263-7-3

Technical documentation and resources