RN1105MFV,L3F

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Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A VESM

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Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A VESM

Technical Specifications

Parameters and characteristics for this part

Specification	RN1105MFV,L3F

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Mounting Type	Surface Mount
Package / Case	SOT-723
Power - Max [Max]	150 mW
Resistor - Base (R1)	2.2 kOhm
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	VESM
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Power - Max [Max]	Mounting Type	Resistor - Base (R1)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Resistor - Emitter Base (R2)	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Current - Collector Cutoff (Max) [Max]	Transistor Type	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition
Toshiba Semiconductor and Storage RN1105ACT(TPL3)	100 mW	Surface Mount	2.2 kOhm	80	CST3	47000 Ohms	50 V	SC-101 SOT-883	500 nA	NPN - Pre-Biased	80 mA	150 mV
Toshiba Semiconductor and Storage RN1105MFV,L3F	150 mW	Surface Mount	2.2 kOhm	80	VESM	47000 Ohms	50 V	SOT-723	500 nA	NPN - Pre-Biased	100 mA	300 mV
Toshiba Semiconductor and Storage RN1105,LF(CT	100 mW	Surface Mount	2.2 kOhm	80	SSM	47000 Ohms	50 V	SC-75 SOT-416	500 nA	NPN - Pre-Biased	100 mA	300 mV	250 MHz
Toshiba Semiconductor and Storage RN1105MFV,L3F(CT	150 mW	Surface Mount	2.2 kOhm	80	VESM	47000 Ohms	50 V	SOT-723	500 nA	NPN - Pre-Biased	100 mA	300 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM

Technical documentation and resources