SGB07N120ATMA1

Obsolete

Infineon Technologies

IGBT 1200V 16.5A 125W TO263-3-2

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Obsolete

Infineon Technologies

IGBT 1200V 16.5A 125W TO263-3-2

Technical Specifications

Parameters and characteristics for this part

Specification	SGB07N120ATMA1

Current - Collector (Ic) (Max) [Max]	16.5 A
Current - Collector Pulsed (Icm)	27 A
Gate Charge	70 nC
IGBT Type	NPT
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Supplier Device Package	PG-TO263-3-2
Switching Energy	1 mJ
Td (on/off) @ 25°C	440 ns, 27 ns
Test Condition	15 V, 800 V, 8 A, 47 Ohm
Vce(on) (Max) @ Vge, Ic	3.6 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Test Condition	Td (on/off) @ 25°C	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Current - Collector Pulsed (Icm)	Switching Energy	IGBT Type	Package / Case	Gate Charge	Voltage - Collector Emitter Breakdown (Max) [Max]
Infineon Technologies SGB07N120ATMA1	-55 °C	150 °C	Surface Mount	8 A 15 V 47 Ohm 800 V	27 ns 440 ns	PG-TO263-3-2	16.5 A	3.6 V	27 A	1 mJ	NPT	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	70 nC	1200 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT NPT 1200 V 16.5 A 125 W Surface Mount PG-TO263-3-2

Technical documentation and resources

No documents available