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STPSC10H12G2Y-TR - STMicroelectronics-STH180N10F3-2 MOSFETs STH180N10F3-2 STMicroelectronics Transistors MOSFETs N-CH 100V 180A 3-Pin(2+Tab) H2PAK T/R - Arrow.com

STPSC10H12G2Y-TR

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STMicroelectronics

DIODE SCHOTTKY SIC 1.2KV 10A 3-PIN(2+TAB) H2PAK T/R AUTOMOTIVE AEC-Q101

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Search across all available documentation for this part.

DocumentsAN4242+13
STPSC10H12G2Y-TR - STMicroelectronics-STH180N10F3-2 MOSFETs STH180N10F3-2 STMicroelectronics Transistors MOSFETs N-CH 100V 180A 3-Pin(2+Tab) H2PAK T/R - Arrow.com

STPSC10H12G2Y-TR

Active
STMicroelectronics

DIODE SCHOTTKY SIC 1.2KV 10A 3-PIN(2+TAB) H2PAK T/R AUTOMOTIVE AEC-Q101

Deep-Dive with AI

DocumentsAN4242+13

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 5.64
10$ 4.74
100$ 3.83
500$ 3.41
Digi-Reel® 1$ 5.64
10$ 4.74
100$ 3.83
500$ 3.41
Tape & Reel (TR) 1000$ 2.63
NewarkEach (Supplied on Cut Tape) 1$ 7.90
10$ 5.84
25$ 5.45
50$ 5.06
100$ 4.67
250$ 4.46
500$ 4.24
1000$ 4.19

Description

General part information

STPSC10H12G2Y-TR Series

This 10 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Housed in D2PAK HV, this diode is perfectly suited for a usage in PFC applications, in OBC, DC/DC for EV, easing the compliance to IEC-60664-1.

The STPSC10H12G2Y-TR will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.