IXYP10N65C3D1

Obsolete

IXYS

IGBT PT 650V 30A TO220

Search across all available documentation for this part.

Obsolete

IXYS

IGBT PT 650V 30A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	IXYP10N65C3D1

Current - Collector (Ic) (Max) [Max]	30 A
Current - Collector Pulsed (Icm)	54 A
Gate Charge	18 nC
IGBT Type	PT
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power - Max [Max]	160 W
Reverse Recovery Time (trr)	170 ns
Supplier Device Package	TO-220
Td (on/off) @ 25°C	77 ns, 20 ns
Test Condition	400 V, 15 V, 50 Ohm, 10 A
Vce(on) (Max) @ Vge, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max)	650 V

Part	Package / Case	Test Condition	IGBT Type	Mounting Type	Current - Collector (Ic) (Max) [Max]	Gate Charge	Vce(on) (Max) @ Vge, Ic	Supplier Device Package	Power - Max [Max]	Td (on/off) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Pulsed (Icm)	Switching Energy	Reverse Recovery Time (trr)
IXYS IXYP10N65C3	TO-220-3	10 A 15 V 50 Ohm 400 V	PT	Through Hole	30 A	18 nC	2.5 V	TO-220-3	160 W	20 ns 77 ns	-55 °C	175 ░C	650 V	54 A
IXYS IXYP10N65C3D1M	TO-220-3 Full Pack Isolated Tab	10 A 15 V 50 Ohm 400 V		Through Hole	15 A	18 nC	2.6 V	TO-220 Isolated Tab	53 W	20 ns 77 ns	-55 °C	175 ░C	650 V	50 A	170 µJ 240 µJ	26 ns
IXYS IXYP10N65C3D1	TO-220-3	10 A 15 V 50 Ohm 400 V	PT	Through Hole	30 A	18 nC	2.5 V	TO-220	160 W	20 ns 77 ns	-55 °C	175 ░C	650 V	54 A		170 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT PT 650 V 30 A 160 W Through Hole TO-220

Technical documentation and resources

No documents available