SI7860ADP-T1-E3

Obsolete

MOSFET N-CH 30V 11A PPAK SO-8

Obsolete

MOSFET N-CH 30V 11A PPAK SO-8

Description

General part information

N-Channel 30 V 11A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8

Parameters and characteristics for this part

Specification	SI7860ADP-T1-E3

Current - Continuous Drain (Id) (Ta)	11 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	18 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	1.8 W
Rds On (Max)	9.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

Part	Rds On (Max)	Package / Case	Gate Charge (Max)	Package Name	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Ta)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Technology	Vgs(th) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Power Dissipation (Max)
Vishay Dale SI7860ADP-T1-E3	9.5 mOhm	PowerPAK® SO-8	18 nC	PowerPAK® SO-8	N-Channel	Surface Mount	30 V	11 A	-55 °C	150 °C	20 V	MOSFET (Metal Oxide)	3 V	10 V	4.5 V	1.8 W
Vishay Dale SI7860DP-T1-GE3	8 mOhm	PowerPAK® SO-8	18 nC	PowerPAK® SO-8	N-Channel	Surface Mount	30 V	11 A	-55 °C	150 °C	20 V	MOSFET (Metal Oxide)	3 V	10 V	4.5 V	1.8 W

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3D models and CAD resources for this part

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