RN1117(TE85L,F)

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Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

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Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

Technical Specifications

Parameters and characteristics for this part

Specification	RN1117(TE85L,F)

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	30
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SC-75, SOT-416
Power - Max [Max]	100 mW
Resistor - Base (R1)	10 kOhms
Resistor - Emitter Base (R2)	4700 Ohms
Supplier Device Package	SSM
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Frequency - Transition	Resistor - Base (R1)	Transistor Type	Power - Max [Max]	Package / Case	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Resistor - Emitter Base (R2)	Current - Collector (Ic) (Max) [Max]
Toshiba Semiconductor and Storage RN1117(T5L,F,T)	250 MHz	10 kOhms	NPN - Pre-Biased	100 mW	SC-75 SOT-416	SSM	300 mV	500 nA	30	50 V	Surface Mount	4700 Ohms	100 mA
Toshiba Semiconductor and Storage RN1117(TE85L,F)	250 MHz	10 kOhms	NPN - Pre-Biased	100 mW	SC-75 SOT-416	SSM	300 mV	500 nA	30	50 V	Surface Mount	4700 Ohms	100 mA

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General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 100 mW Surface Mount SSM

Technical documentation and resources