RN1409,LF

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Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SMINI

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Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SMINI

Technical Specifications

Parameters and characteristics for this part

Specification	RN1409,LF

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	200 mW
Resistor - Base (R1)	47 kOhms
Resistor - Emitter Base (R2)	22 kOhms
Supplier Device Package	S-Mini
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Resistor - Base (R1)	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Transistor Type	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Resistor - Emitter Base (R2)	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Mounting Type
Toshiba Semiconductor and Storage RN1409,LF	47 kOhms	300 mV	50 V	500 nA	NPN - Pre-Biased	200 mW	100 mA	250 MHz	22 kOhms	SC-59 SOT-23-3 TO-236-3	70	S-Mini	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount S-Mini

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