IXTN120N25

Obsolete

IXYS

MOSFET N-CH 250V 120A SOT227B

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Obsolete

IXYS

MOSFET N-CH 250V 120A SOT227B

Technical Specifications

Parameters and characteristics for this part

Specification	IXTN120N25

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	250 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	360 nC
Input Capacitance (Ciss) (Max) @ Vds	7700 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max)	730 W
Rds On (Max) @ Id, Vgs [Max]	20 mOhm
Supplier Device Package	SOT-227B
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Package / Case	Technology	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Mounting Type	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]
IXYS IXTN120N25	250 V	SOT-227-4 miniBLOC	MOSFET (Metal Oxide)	360 nC	SOT-227B	Chassis Mount	N-Channel	7700 pF	730 W	4 V	120 A	20 mOhm	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 250 V 120A (Tc) 730W (Tc) Chassis Mount SOT-227B

Technical documentation and resources

No documents available