DDB6U215N16LHOSA1

LTB

Infineon Technologies

DIODE MODULE, BRIDGE, 1.6KV, 300A

Search across all available documentation for this part.

LTB

Infineon Technologies

DIODE MODULE, BRIDGE, 1.6KV, 300A

Technical Specifications

Parameters and characteristics for this part

Specification	DDB6U215N16LHOSA1

Current - Reverse Leakage @ Vr	10 mA
Diode Configuration	3 Independent
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	Module
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	Module
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.61 V

Part	Mounting Type	Technology	Speed	Speed	Diode Configuration	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Supplier Device Package	Package / Case	Voltage - Forward (Vf) (Max) @ If
Infineon Technologies DDB6U215N16LHOSA1	Chassis Mount	Standard	Standard Recovery >500ns	200 mA	3 Independent	150 °C	-40 °C	10 mA	Module	Module	1.61 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tray	1	$ 167.57

General part information

Diode Array 3 Independent 1600 V Chassis Mount Module

Technical documentation and resources