STS13N3LLH5

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STMicroelectronics

MOSFET N-CH 30V 13A 8SO

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STMicroelectronics

MOSFET N-CH 30V 13A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	STS13N3LLH5

Current - Continuous Drain (Id) @ 25°C	13 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	1500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.7 W
Rds On (Max) @ Id, Vgs [Max]	6.6 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	22 V
Vgs (Max) [Min]	-20 V
Vgs(th) (Max) @ Id	1 V

MOSFET N-CH 30V 13A 8SO

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Package / Case [y]	Package / Case [x]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Vgs (Max) [Min]	Vgs (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Rds On (Max) @ Id, Vgs [Max]
STMicroelectronics STS13N3LLH5	Surface Mount	13 A	1500 pF	MOSFET (Metal Oxide)	4.5 V, 10 V	8-SOIC	3.9 mm	0.154 in	30 V	2.7 W	12 nC	1 V	8-SOIC	-20 V	22 V	-55 °C	150 °C	N-Channel	6.6 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 13A (Tc) 2.7W (Tc) Surface Mount 8-SOIC

Technical documentation and resources