IPU95R3K7P7AKMA1

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Infineon Technologies

MOSFET, 950V, 2A, 150DEG C, 22W

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Infineon Technologies

MOSFET, 950V, 2A, 150DEG C, 22W

Technical Specifications

Parameters and characteristics for this part

Specification	IPU95R3K7P7AKMA1

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	950 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max) [Max]	22 W
Rds On (Max) @ Id, Vgs	3.7 Ohm
Supplier Device Package	PG-TO251-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Technology	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	FET Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)
Infineon Technologies IPU95R3K7P7AKMA1	MOSFET (Metal Oxide)	22 W	3.7 Ohm	Through Hole	IPAK TO-251-3 Short Leads TO-251AA	PG-TO251-3	-55 °C	150 °C	2 A	3.5 V	6 nC	N-Channel	20 V	10 V	950 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 950 V 2A (Tc) 22W (Tc) Through Hole PG-TO251-3

Technical documentation and resources