IPC028N03L3X1SA1
LTBInfineon Technologies
OPTIMOS™ AND STRONGIRFET™ LOW AND MEDIUM VOLTAGE POWER MOSFET BARE DIES
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Search across all available documentation for this part.
IPC028N03L3X1SA1
LTBInfineon Technologies
OPTIMOS™ AND STRONGIRFET™ LOW AND MEDIUM VOLTAGE POWER MOSFET BARE DIES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IPC028N03L3X1SA1 |
|---|---|
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Rds On (Max) @ Id, Vgs | 50 mOhm |
| Supplier Device Package | Sawn on foil |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id [Max] | 2.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 50485 | $ 0.25 | |
Description
General part information
IPC028N Series
With the new OptiMOS™ 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior as increased battery life.
Documents
Technical documentation and resources