DMN3012LFG-13

Obsolete

Diodes Inc

30V SYNCHRONOUS N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI

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DMN3012LFG-13

Obsolete

Diodes Inc

30V SYNCHRONOUS N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI

Deep-Dive with AI

DocumentsDatasheet Recommended Soldering Techniques +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMN3012LFG-13

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	6.1 nC, 12.6 nC
Input Capacitance (Ciss) (Max) @ Vds	1480 pF
Input Capacitance (Ciss) (Max) @ Vds	850 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerLDFN
Power - Max [Max]	2.2 W
Rds On (Max) @ Id, Vgs	6 mOhm, 12 mOhm
Supplier Device Package	PowerDI3333-8 (Type D)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.15 V, 2.1 V

DMN3012LFG Series

30V SYNCHRONOUS N-Channel Enhancement Mode MOSFET POWERDI

Part	Supplier Device Package	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case	Configuration	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Technology
Diodes Inc DMN3012LFG-13	PowerDI3333-8 (Type D)	6 mOhm 12 mOhm	1480 pF	850 pF	30 V	-55 °C	150 °C	Surface Mount	8-PowerLDFN	2 N-Channel (Dual)	2.2 W	6.1 nC 12.6 nC	1.15 V 2.1 V	20 A	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

DMN3012LFG Series

This new generation MOSFET is designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.