IPP80P03P4L04AKSA2

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Infineon Technologies

IPP80P03P4L-04 IS AN AUTOMOTIVE MOSFET OFFERING -30V, P-CH, 4.4 MΩ MAX, TO-220, OPTIMOS™-P2, IDEAL FOR REVERSE BATTERY PROTECTION.

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Active

Infineon Technologies

IPP80P03P4L-04 IS AN AUTOMOTIVE MOSFET OFFERING -30V, P-CH, 4.4 MΩ MAX, TO-220, OPTIMOS™-P2, IDEAL FOR REVERSE BATTERY PROTECTION.

Technical Specifications

Parameters and characteristics for this part

Specification	IPP80P03P4L04AKSA2

Drain to Source Voltage (Vdss)	30 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	160 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	11300 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	137 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	4.4 mOhm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	5 V
Vgs (Max) [Min]	-16 V
Vgs(th) (Max) @ Id	2 V

Part	FET Type	Qualification	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case	Grade	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Vgs (Max) [Max]	Vgs (Max) [Min]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]
Infineon Technologies IPP80P03P4L04AKSA2	P-Channel	AEC-Q101	30 V	2 V	PG-TO220-3-1	TO-220-3	Automotive	4.4 mOhm	Through Hole	160 nC	MOSFET (Metal Oxide)	5 V	-16 V	137 W	11300 pF	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 30 V 80A (Tc) 137W (Tc) Through Hole PG-TO220-3-1

Technical documentation and resources