STGP15M120F3

Obsolete

STMicroelectronics

IGBT TRENCH FS 1200V 30A TO-220

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STGP15M120F3

Obsolete

STMicroelectronics

IGBT TRENCH FS 1200V 30A TO-220

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STGP15M120F3

Current - Collector (Ic) (Max) [Max]	30 A
Current - Collector Pulsed (Icm)	60 A
Gate Charge	53 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power - Max [Max]	259 W
Supplier Device Package	TO-220
Td (on/off) @ 25°C	122 ns, 26 ns
Test Condition	600 V, 15 V, 15 A, 22 Ohm
Vce(on) (Max) @ Vge, Ic	2.3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

STGP15M65DF2 Series

Trench gate field-stop IGBT, H series 600 V, 15 A high speed

Part	Switching Energy	Td (on/off) @ 25°C	Mounting Type	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Test Condition	Operating Temperature [Min]	Operating Temperature [Max]	Reverse Recovery Time (trr)	Current - Collector Pulsed (Icm)	IGBT Type	Vce(on) (Max) @ Vge, Ic	Package / Case	Supplier Device Package	Gate Charge	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Td (on/off) @ 25°C
STMicroelectronics STGP15H60DF	136 µJ 207 µJ	24.5 ns 118 ns	Through Hole	115 W	600 V	10 Ohm 15 A 15 V 400 V	-55 °C	175 ░C	103 ns	60 A	Trench Field Stop	2 V	TO-220-3	TO-220	81 nC	30 A
STMicroelectronics STGP15M65DF2	90 µJ 450 µJ	24 ns 93 ns	Through Hole	136 W		12 Ohm 15 V 15 A 400 V	-55 °C	175 ░C	142 ns	60 A	Trench Field Stop	2 V	TO-220-3	TO-220	45 nC	30 A	650 V
STMicroelectronics STGP15M120F3			Through Hole	259 W	1200 V	15 V 15 A 22 Ohm 600 V	-55 °C	175 ░C		60 A	Trench Field Stop	2.3 V	TO-220-3	TO-220	53 nC	30 A		26 ns 122 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 7.28
		50	$ 3.92
		100	$ 3.59
		500	$ 3.02

Description

General part information

STGP15M65DF2 Series

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Documents

Technical documentation and resources