GT50J121(Q)

Obsolete

Toshiba Semiconductor and Storage

IGBT 600V 50A 240W TO3P LH

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Obsolete

Toshiba Semiconductor and Storage

IGBT 600V 50A 240W TO3P LH

Technical Specifications

Parameters and characteristics for this part

Specification	GT50J121(Q)

Current - Collector (Ic) (Max)	50 A
Current - Collector Pulsed (Icm)	100 A
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-3PL
Power - Max [Max]	240 W
Supplier Device Package	TO-3P(LH)
Switching Energy	1.34 mJ, 1.3 mJ
Td (on/off) @ 25°C	90 ns
Td (on/off) @ 25°C	300 ns
Test Condition	50 A, 15 V, 300 V, 13 Ohm
Vce(on) (Max) @ Vge, Ic	2.45 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Mounting Type	Switching Energy	Supplier Device Package	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Test Condition	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Operating Temperature	Current - Collector (Ic) (Max)
Toshiba Semiconductor and Storage GT50J121(Q)	Through Hole	1.3 mJ 1.34 mJ	TO-3P(LH)	100 A	2.45 V	90 ns	300 ns	13 Ohm 15 V 50 A 300 V	TO-3PL	600 V	240 W	150 °C	50 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT 600 V 50 A 240 W Through Hole TO-3P(LH)

Technical documentation and resources

No documents available