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2SA1221-AZ - BCR12KM-12LA-1A6X2

2SA1221-AZ

Active
Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSISTOR

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2SA1221-AZ - BCR12KM-12LA-1A6X2

2SA1221-AZ

Active
Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSISTOR

Deep-Dive with AI

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification2SA1221-AZ2SA1221 Series
Current - Collector (Ic) (Max) [Max]500 mA500 mA
Current - Collector Cutoff (Max)200 nA200 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100100
Frequency - Transition45 MHz45 MHz
Mounting TypeThrough HoleThrough Hole
Operating Temperature150 °C150 °C
Package / Case3-SSIP3-SSIP
Power - Max [Max]1 W1 W
Transistor TypePNPPNP
Vce Saturation (Max) @ Ib, Ic [Max]900 mV900 mV
Voltage - Collector Emitter Breakdown (Max)140 V140 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 902$ 0.33

2SA1221 Series

Bipolar Power Transistors

PartDC Current Gain (hFE) (Min) @ Ic, Vce [Min]Mounting TypeVoltage - Collector Emitter Breakdown (Max)Current - Collector Cutoff (Max)Power - Max [Max]Frequency - TransitionPackage / CaseVce Saturation (Max) @ Ib, Ic [Max]Transistor TypeOperating TemperatureCurrent - Collector (Ic) (Max) [Max]
Renesas Electronics Corporation
2SA1221-AZ
100
Through Hole
140 V
200 nA
1 W
45 MHz
3-SSIP
900 mV
PNP
150 °C
500 mA
Renesas Electronics Corporation
2SA1221-T-AZ
100
Through Hole
140 V
200 nA
1 W
45 MHz
3-SSIP
900 mV
PNP
150 °C
500 mA

Description

General part information

2SA1221 Series

A wide variety of products are rolled out, for example, for uses at high temperature (up to 175°C applicable), high power, and low Vce (sat), and others.

Documents

Technical documentation and resources