HN4B102J(TE85L,F)

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Toshiba Semiconductor and Storage

PB-F POWER TRANSISTOR SMV MOQ=30

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Toshiba Semiconductor and Storage

PB-F POWER TRANSISTOR SMV MOQ=30

Technical Specifications

Parameters and characteristics for this part

Specification	HN4B102J(TE85L,F)

Current - Collector (Ic) (Max)	2 A, 1.8 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 hFE
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-74A, SOT-753
Power - Max [Max]	750 mW
Supplier Device Package	SMV
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic	140 mV, 200 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Current - Collector (Ic) (Max)	Package / Case	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature	Current - Collector Cutoff (Max) [Max]	Supplier Device Package
Toshiba Semiconductor and Storage HN4B102J(TE85L,F)	200 hFE	Surface Mount	140 mV 200 mV	750 mW	1.8 A 2 A	SC-74A SOT-753	1 NPN 1 PNP	30 V	150 °C	100 nA	SMV

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General part information

Bipolar (BJT) Transistor Array 1 NPN, 1 PNP 30V 1.8A, 2A 750mW Surface Mount SMV

Technical documentation and resources