DMNH6012LK3-13

Active

Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 60A I(D), 60V, 0.018OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252, DPAK-3/2

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet Recommended Soldering Techniques +1

DMNH6012LK3-13

Active

Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 60A I(D), 60V, 0.018OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252, DPAK-3/2

Deep-Dive with AI

DocumentsDatasheet Recommended Soldering Techniques +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMNH6012LK3-13

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	35.2 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1926 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	2 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	TO-252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

DMNH6012SPSQ Series

60V +175°C N-Channel Enhancement Mode MOSFET

Part	FET Type	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Technology	Grade	Vgs (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Qualification	Current - Continuous Drain (Id) @ 25°C
Diodes Inc DMNH6012LK3-13	N-Channel	Surface Mount	-55 °C	175 ░C	60 V	MOSFET (Metal Oxide)	Automotive	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	35.2 nC	3 V	1926 pF	2 W	12 mOhm	TO-252-3	4.5 V 10 V	AEC-Q101	60 A
Diodes Inc DMNH6012SPS-13	N-Channel	Surface Mount	-55 °C	175 ░C	60 V	MOSFET (Metal Oxide)	Automotive	20 V	8-PowerTDFN	35.2 nC	4 V	1926 pF		11 mOhm	PowerDI5060-8	10 V	AEC-Q101	50 A
Diodes Inc DMNH6012SPSQ-13	N-Channel	Surface Mount	-55 °C	175 ░C	60 V	MOSFET (Metal Oxide)	Automotive	20 V	8-PowerTDFN	35.2 nC	4 V	1926 pF		11 mOhm	PowerDI5060-8	10 V	AEC-Q101	50 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	2500	$ 0.47
		5000	$ 0.44
		7500	$ 0.44

Description

General part information

DMNH6012SPSQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: DC motor controls, solenoid drivings, and power-management functions.