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STFW3N170 - TO-3P-3 Full Pack

STFW3N170

Active
STMicroelectronics

N-CHANNEL 1700 V, 7 OHM TYP., 2.6 A, POWERMESH POWER MOSFET IN TO-3PF PACKAGE

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Search across all available documentation for this part.

DocumentsTN1156TN1378+16
STFW3N170 - TO-3P-3 Full Pack

STFW3N170

Active
STMicroelectronics

N-CHANNEL 1700 V, 7 OHM TYP., 2.6 A, POWERMESH POWER MOSFET IN TO-3PF PACKAGE

Deep-Dive with AI

DocumentsTN1156TN1378+16

Technical Specifications

Parameters and characteristics for this part

SpecificationSTFW3N170
Current - Continuous Drain (Id) @ 25°C2.6 A
Drain to Source Voltage (Vdss)1700 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]44 nC
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-3P-3 Full Pack
Power Dissipation (Max)63 W
Rds On (Max) @ Id, Vgs [Max]13 Ohm
Supplier Device PackageTO-3PF
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 5.74
30$ 4.55
120$ 3.90
510$ 3.47
1020$ 2.97
2010$ 2.80
NewarkEach 1$ 6.09
10$ 5.13
25$ 3.81
50$ 3.50
100$ 3.18
250$ 2.93
600$ 2.68

Description

General part information

STFW3N170 Series

This Power MOSFET is designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.