STP19NB20

Obsolete

STMicroelectronics

MOSFET N-CH 200V 19A TO220AB

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Obsolete

STMicroelectronics

MOSFET N-CH 200V 19A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	STP19NB20

Current - Continuous Drain (Id) @ 25°C	19 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Input Capacitance (Ciss) (Max) @ Vds	1000 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	180 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Technology	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STP19NM65N	15.5 A	TO-220	25 V	TO-220-3	270 mOhm	150 °C	55 nC	4 V	1900 pF	Through Hole	MOSFET (Metal Oxide)	150 W	N-Channel	650 V	10 V
STMicroelectronics STP19NB20	19 A	TO-220	30 V	TO-220-3	180 mOhm	150 °C		5 V	1000 pF	Through Hole	MOSFET (Metal Oxide)	125 W	N-Channel	200 V	10 V	40 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 19A (Tc) 125W (Tc) Through Hole TO-220

Technical documentation and resources