
ES3F V7G
UnknownTaiwan Semiconductor Corporation
DIODE GEN PURP 300V 3A DO214AB
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ES3F V7G
UnknownTaiwan Semiconductor Corporation
DIODE GEN PURP 300V 3A DO214AB
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | ES3F V7G |
|---|---|
| Capacitance @ Vr, F | 30 pF |
| Current - Average Rectified (Io) | 3 A |
| Current - Reverse Leakage @ Vr | 10 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | SMC, DO-214AB |
| Reverse Recovery Time (trr) | 35 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | DO-214AB (SMC) |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 300 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
ES3F Series
Diode 300 V 3A Surface Mount DO-214AB (SMC)
Documents
Technical documentation and resources