STS8DN6LF6AG

LTB

STMicroelectronics

AUTOMOTIVE-GRADE DUAL N-CHANNEL 60 V, 21 MOHM TYP., 8 A STRIPFET F6 POWER MOSFET IN A SO-8 PACKAGE

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STS8DN6LF6AG

LTB

STMicroelectronics

AUTOMOTIVE-GRADE DUAL N-CHANNEL 60 V, 21 MOHM TYP., 8 A STRIPFET F6 POWER MOSFET IN A SO-8 PACKAGE

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Description Specifications Series Pricing CAD Documents

Description

General part information

STS8DN6LF6AG Series

This device is a dual N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.

Technical Specifications

Parameters and characteristics for this part

Specification	STS8DN6LF6AG

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Ta)	8 A
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Max)	27 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	1340 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC, 8-SO
Package Width	3.9 mm
Power - Max	3.2 VA
Qualification	AEC-Q101
Rds On (Max)	24 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.5 V

STS8DN6LF6AG Series

Part	Drain to Source Voltage (Vdss)	Power - Max	Rds On (Max)	Technology	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Ta)	Mounting Type	Input Capacitance (Ciss) (Max)	Channel Count	Configuration	Configuration - Features	Package Length	Package Name	Package Width	Qualification	FET Feature	Grade	Vgs(th) (Max)
STMicroelectronics STS8DN6LF6AG	60 V	3.2 VA	24 mOhm	MOSFET (Metal Oxide)	27 nC	-55 °C	175 °C	8 A	Surface Mount	1340 pF	2	N-Channel	Dual	0.154 in	8-SO 8-SOIC	3.9 mm	AEC-Q101	Logic Level Gate	Automotive	2.5 V