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STS8DN6LF6AG - STMICROELECTRONICS M95128-DRMN3TP/K

STS8DN6LF6AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE DUAL N-CHANNEL 60 V, 21 MOHM TYP., 8 A STRIPFET F6 POWER MOSFET IN A SO-8 PACKAGE

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Search across all available documentation for this part.

DocumentsAN3267+16
STS8DN6LF6AG - STMICROELECTRONICS M95128-DRMN3TP/K

STS8DN6LF6AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE DUAL N-CHANNEL 60 V, 21 MOHM TYP., 8 A STRIPFET F6 POWER MOSFET IN A SO-8 PACKAGE

Deep-Dive with AI

DocumentsAN3267+16

Technical Specifications

Parameters and characteristics for this part

SpecificationSTS8DN6LF6AG
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C8 A
Drain to Source Voltage (Vdss)60 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs27 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]1340 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power - Max [Max]3.2 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs24 mOhm
Supplier Device Package8-SO
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.48
10$ 1.21
100$ 0.94
500$ 0.80
1000$ 0.65
Digi-Reel® 1$ 1.48
10$ 1.21
100$ 0.94
500$ 0.80
1000$ 0.65
Tape & Reel (TR) 2500$ 0.61
5000$ 0.58
12500$ 0.56
NewarkEach (Supplied on Cut Tape) 1$ 1.81
10$ 1.43
25$ 1.33
50$ 1.23
100$ 1.14
250$ 1.06
500$ 0.97
1000$ 0.89

Description

General part information

STS8DN6LF6AG Series

This device is a dual N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.