PSMNR67-30YLEX

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Nexperia USA Inc.

N-CHANNEL 30 V, 0.70 MOHM, ASFET FOR HOTSWAP WITH ENHANCED SOA IN LFPAK56E

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PSMNR67-30YLEX

Active

Nexperia USA Inc.

N-CHANNEL 30 V, 0.70 MOHM, ASFET FOR HOTSWAP WITH ENHANCED SOA IN LFPAK56E

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Description Specifications Series Pricing CAD Documents

Description

General part information

PSMNR67-30YLE Series

N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56E package optimized for low RDSonand strong safe operating area, optimized for hot-swap, inrush and linear-mode applications.

Technical Specifications

Parameters and characteristics for this part

Specification	PSMNR67-30YLEX

Current - Continuous Drain (Id) (Tc)	365 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	7 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	185 nC
Input Capacitance (Ciss) (Max)	12417 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	4-LFPAK, SOT-1023
Package Name	LFPAK56, Power-SO8
Power Dissipation (Max)	333 W
Rds On (Max)	0.7 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.2 V

PSMNR67-30YLE Series

N-channel 30 V, 0.70 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56E

Part	FET Type	Package Name	Vgs (Max)	Mounting Type	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Technology	Gate Charge (Max)	Rds On (Max)	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Drain to Source Voltage (Vdss)
Nexperia USA Inc. PSMNR67-30YLEX	N-Channel	LFPAK56 Power-SO8	20 V	Surface Mount	4-LFPAK SOT-1023	-55 °C	175 °C	333 W	12417 pF	MOSFET (Metal Oxide)	185 nC	0.7 mOhm	365 A	2.2 V	10 V	7 V	30 V