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JANTXV1N5809URS

JANTXV1N5809URS

Active
Microchip Technology

100V 3A UFR,FRR SQ SMT B-BODY SQ. MELF ROHS COMPLIANT: YES

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JANTXV1N5809URS

JANTXV1N5809URS

Active
Microchip Technology

100V 3A UFR,FRR SQ SMT B-BODY SQ. MELF ROHS COMPLIANT: YES

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Description

General part information

JANTXV1N5809URS-Rectifier Series

This "Ultrafast Recovery" rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. The industry-recognized 6.0 amp rated rectifiers with working peak reverse voltages from 50 to 150 volts are hermetically sealed with void-less glass construction using an internal "Category 1" metallurgical bond. These devices are available in both surface mount MELF and leaded package configurations. Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages.

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTXV1N5809URS
Capacitance60 pF
Current - Average Rectified (Io)3 A
Current - Reverse Leakage5 µA
GradeMilitary
Mounting TypeSurface Mount
Operating Temperature - Junction (Max)175 °C
Operating Temperature - Junction (Min)-65 °C
Package / CaseSQ-MELF, B
Package NameSQ-MELF, B
QualificationMIL-PRF-19500, 477
Reverse Recovery Time (trr)30 ns
Speed - Fast Recovery (Maximum)500 ns
Speed - Fast Recovery (Minimum)200 mA
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)100 V
Voltage - Forward (Vf) (Max)875 mV

Pricing

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CAD

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