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IRLML2060TRPBF - ONSEMI MMBZ18VALT1G.

IRLML2060TRPBF

Active
Infineon Technologies

POWER MOSFET, N CHANNEL, 60 V, 1.2 A, 0.356 OHM, SOT-23, SURFACE MOUNT

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IRLML2060TRPBF - ONSEMI MMBZ18VALT1G.

IRLML2060TRPBF

Active
Infineon Technologies

POWER MOSFET, N CHANNEL, 60 V, 1.2 A, 0.356 OHM, SOT-23, SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRLML2060TRPBF
Current - Continuous Drain (Id) @ 25°C1.2 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]0.67 nC
Input Capacitance (Ciss) (Max) @ Vds64 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)1.25 W
Rds On (Max) @ Id, Vgs480 mOhm
Supplier Device PackageMicro3™/SOT-23
TechnologyMOSFET (Metal Oxide)
Vgs (Max)16 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.53
10$ 0.33
100$ 0.21
500$ 0.16
1000$ 0.14
Digi-Reel® 1$ 0.53
10$ 0.33
100$ 0.21
500$ 0.16
1000$ 0.14
Tape & Reel (TR) 3000$ 0.12
6000$ 0.11
9000$ 0.10
15000$ 0.10
21000$ 0.09
30000$ 0.09
75000$ 0.09

Description

General part information

IRLML2060 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Documents

Technical documentation and resources

No documents available