AOW290

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 17.5/140A TO262

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Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 17.5/140A TO262

Technical Specifications

Parameters and characteristics for this part

Specification	AOW290

Current - Continuous Drain (Id) @ 25°C	140 A, 17.5 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	126 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	1.9 W, 500 W
Rds On (Max) @ Id, Vgs	3.2 mOhm
Supplier Device Package	TO-262
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.1 V

Part	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max)	Package / Case	Vgs (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs
Alpha & Omega Semiconductor Inc. AOW290	3.2 mOhm	-55 °C	175 ░C	4.1 V	100 V	MOSFET (Metal Oxide)	1.9 W 500 W	I2PAK TO-262-3 Long Leads TO-262AA	20 V	N-Channel	17.5 A 140 A	10 V	Through Hole	TO-262	126 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 17.5A (Ta), 140A (Tc) 1.9W (Ta), 500W (Tc) Through Hole TO-262

Technical documentation and resources