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STW70N65M2 - TO-247-3 HiP

STW70N65M2

Active
STMicroelectronics

N-CHANNEL 650 V, 0.039 OHM TYP., 63 A MDMESH M2 POWER MOSFET IN A TO-247 PACKAGE

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STW70N65M2 - TO-247-3 HiP

STW70N65M2

Active
STMicroelectronics

N-CHANNEL 650 V, 0.039 OHM TYP., 63 A MDMESH M2 POWER MOSFET IN A TO-247 PACKAGE

Deep-Dive with AI

Documents+24

Technical Specifications

Parameters and characteristics for this part

SpecificationSTW70N65M2
Current - Continuous Drain (Id) @ 25°C63 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]117 nC
Input Capacitance (Ciss) (Max) @ Vds5140 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)446 W
Rds On (Max) @ Id, Vgs46 mOhm
Supplier Device PackageTO-247-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 600$ 7.93

Description

General part information

STW70N65M2 Series

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.