STW70N65M2
ActiveN-CHANNEL 650 V, 0.039 OHM TYP., 63 A MDMESH M2 POWER MOSFET IN A TO-247 PACKAGE
STW70N65M2
ActiveN-CHANNEL 650 V, 0.039 OHM TYP., 63 A MDMESH M2 POWER MOSFET IN A TO-247 PACKAGE
Description
General part information
STW70 Series
This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
Technical Specifications
Parameters and characteristics for this part
| Specification | STW70N65M2 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 63 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 117 nC |
| Input Capacitance (Ciss) (Max) | 5140 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247-3 |
| Power Dissipation (Max) | 446 W |
| Rds On (Max) | 46 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part