SMBTA56E6433HTMA1

Infineon Technologies

TRANS GP BJT PNP 80V 0.5A 330MW AUTOMOTIVE AEC-Q101 3-PIN SOT-23 T/R

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Infineon Technologies

TRANS GP BJT PNP 80V 0.5A 330MW AUTOMOTIVE AEC-Q101 3-PIN SOT-23 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	SMBTA56E6433HTMA1

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100 hFE
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	330 mW
Supplier Device Package	PG-SOT23
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature	Package / Case	Supplier Device Package	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Transistor Type
Infineon Technologies SMBTA56E6433HTMA1	250 mV	330 mW	100 hFE	150 °C	SC-59 SOT-23-3 TO-236-3	PG-SOT23	Surface Mount	80 V	100 MHz	100 nA	500 mA	PNP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 80 V 500 mA 100MHz 330 mW Surface Mount PG-SOT23

Technical documentation and resources