ISC028N04NM5ATMA1
ActiveOPTIMOS™ 5 N-CHANNEL POWER MOSFET 40 V ; SUPERSO8 5X6 PACKAGE; 2.8 MOHM;
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ISC028N04NM5ATMA1
ActiveOPTIMOS™ 5 N-CHANNEL POWER MOSFET 40 V ; SUPERSO8 5X6 PACKAGE; 2.8 MOHM;
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Technical Specifications
Parameters and characteristics for this part
| Specification | ISC028N04NM5ATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 24 A, 121 A |
| Drain to Source Voltage (Vdss) | 40 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 38 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 3 W, 75 W |
| Rds On (Max) @ Id, Vgs [Max] | 2.8 mOhm |
| Supplier Device Package | PG-TDSON-8 FL |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.72 | |
| 10 | $ 1.09 | |||
| 100 | $ 0.73 | |||
| 500 | $ 0.58 | |||
| 1000 | $ 0.53 | |||
| 2000 | $ 0.49 | |||
| Digi-Reel® | 1 | $ 1.72 | ||
| 10 | $ 1.09 | |||
| 100 | $ 0.73 | |||
| 500 | $ 0.58 | |||
| 1000 | $ 0.53 | |||
| 2000 | $ 0.49 | |||
| Tape & Reel (TR) | 5000 | $ 0.44 | ||
| 10000 | $ 0.44 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 1.80 | |
| 10 | $ 1.21 | |||
| 25 | $ 1.10 | |||
| 50 | $ 0.99 | |||
| 100 | $ 0.88 | |||
| 250 | $ 0.81 | |||
| 500 | $ 0.74 | |||
| 1000 | $ 0.65 | |||
Description
General part information
ISC028N Series
With the OptiMOSTM5 40V normal level product family Infineon offers a benchmark solution for applications requiring normal level (higher threshold voltage) drive capability. The high Vthin the normal level portfolio offers immunity to false turn-on due to noisy environments. In addition, lower QGD/QGSratios (CGD/CGSdivider ratio) reduce the peak of the gate voltage spikes, further contributing to the robustness against unwanted turn-on.
Documents
Technical documentation and resources