Specification	APTM120H29FG

Channel Count	4
Configuration	N-Channel
Configuration - Features	Full Bridge
Current - Continuous Drain (Id)	34 A
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Max)	374 nC
Input Capacitance (Ciss) (Max)	10300 pF
Mounting Type	Chassis Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package / Case	SP6
Package Name	SP6
Power - Max	780 W
Rds On (Max)	348 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	5 V

APTM120 Series

1200V/Single switch + series and parallel diode/Si MOSFET

Part	Gate Charge (Max)	Vgs(th) (Max)	Package Name	Current - Continuous Drain (Id)	Technology	Channel Count	Configuration - Features	Configuration	Power - Max	Package / Case	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max)	Vgs (Max)	FET Type	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Max Rds On, Min Rds On)
Microchip Technology APTM120A20DG	600 nC	5 V	SP6	50 A	MOSFET (Metal Oxide)	2	Half Bridge	N-Channel	1250 W	SP6	15200 pF	-40 °C	150 °C	1200 V	Chassis Mount	240 mOhm
Microchip Technology APTM120H140FT1G	145 nC	5 V	SP1	8 A	MOSFET (Metal Oxide)	4	Full Bridge	N-Channel	208 W	SP1	3812 pF	-40 °C	150 °C	1200 V	Chassis Mount	1.68 Ohm
Microchip Technology APTM120A15FG	748 nC	5 V	SP6	60 A	MOSFET (Metal Oxide)	2	Half Bridge	N-Channel	1250 W	SP6	20600 pF	-40 °C	150 °C	1200 V	Chassis Mount	175 mOhm
Microchip Technology APTM120U10SAG	1100 nC	5 V	SP6		MOSFET (Metal Oxide)					SP6	28900 pF	-40 °C	150 °C	1200 V	Chassis Mount	120 mOhm	30 V	N-Channel	3290 W	116 A	10 V
Microchip Technology APTM120U10SCAVG	1100 nC	5 V	SP6		MOSFET (Metal Oxide)					SP6	28900 pF	-40 °C	150 °C	1200 V	Chassis Mount	120 mOhm	30 V	N-Channel	3290 W	116 A	10 V
Microchip Technology APTM120H29FG	374 nC	5 V	SP6	34 A	MOSFET (Metal Oxide)	4	Full Bridge	N-Channel	780 W	SP6	10300 pF	-40 °C	150 °C	1200 V	Chassis Mount	348 mOhm
Microchip Technology APTM120UM70DAG	1650 nC	5 V	SP6		MOSFET (Metal Oxide)					SP6	43500 pF	-40 °C	150 °C	1200 V	Chassis Mount	80 mOhm	30 V	N-Channel	5000 W	171 A	10 V
Microchip Technology APTM120DA30T1G	560 nC	5 V	SP1		MOSFET (Metal Oxide)					SP1	14560 pF	-40 °C	150 °C	1200 V	Chassis Mount	360 mOhm	30 V	N-Channel	657 W	31 A	10 V
Microchip Technology APTM120A29FTG	374 nC	5 V	SP4	34 A	MOSFET (Metal Oxide)	2	Half Bridge	N-Channel	780 W	SP4	10300 pF	-40 °C	150 °C	1200 V	Chassis Mount	348 mOhm
Microchip Technology APTM120DA30CT1G	560 nC	5 V	SP1		MOSFET (Metal Oxide)					SP1	14560 pF	-40 °C	150 °C	1200 V	Chassis Mount	360 mOhm	30 V	N-Channel	657 W	31 A	10 V

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

High-Voltage Power Discretes and Modules

APTM120H29FG | Datasheet

Mounting Instructions for SP6 Power Modules

APTM120H29FG Datasheet