AUIRFS3607TRL

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Infineon Technologies

MOSFET N-CH 75V 80A D2PAK

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Infineon Technologies

MOSFET N-CH 75V 80A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRFS3607TRL

Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	84 nC
Input Capacitance (Ciss) (Max) @ Vds	3070 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	140 W
Rds On (Max) @ Id, Vgs	9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs (Max)	Package / Case	FET Type
Infineon Technologies AUIRFS3607TRL	-55 °C	175 ░C	9 mOhm	84 nC	MOSFET (Metal Oxide)	10 V	3070 pF	4 V	Surface Mount	75 V	140 W	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel
Infineon Technologies AUIRFS3607TRL	-55 °C	175 ░C	9 mOhm	84 nC	MOSFET (Metal Oxide)	10 V	3070 pF	4 V	Surface Mount	75 V	140 W	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 75 V 80A (Tc) 140W (Tc) Surface Mount PG-TO263-3

Technical documentation and resources