IXTH50P10

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LITTELFUSE

POWER MOSFET, P CHANNEL, 100 V, 50 A, 0.055 OHM, TO-247, THROUGH HOLE

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IXTH50P10

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LITTELFUSE

POWER MOSFET, P CHANNEL, 100 V, 50 A, 0.055 OHM, TO-247, THROUGH HOLE

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Description Specifications Series Pricing CAD Documents

Description

General part information

IXTH50 Series

P-Channel Standard Power MOSFETs are available in voltage rating from -100V to -600V in industry-popular TO-247 and surface mountable TO-268 packages. They are ideal for Buck Converters and for loads that need to be connected to ground. They can pair-up with equivalent N-Channel MOSFETs to form a complementary pair for a number of applications requiring Totem Pole outputs. Advantages: High power density Easy to mount Space savings

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH50P10

Current - Continuous Drain (Id) (Tc)	50 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	140 nC
Input Capacitance (Ciss) (Max)	4350 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Package Name	TO-247 (IXTH)
Power Dissipation (Max)	300 W
Rds On (Max)	55 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	5 V

IXTH50 Series

Disc Mosfet P Channel-Std TO-247AD

Part	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max)	FET Type	Package / Case	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Technology	Gate Charge (Max)	Vgs (Max)	Vgs(th) (Max)	Mounting Type	Current - Continuous Drain (Id) (Tc)
LITTELFUSE IXTH50N25T	10 V	60 mOhm	N-Channel	TO-247-3	4000 pF	250 V	TO-247 (IXTH)	-55 °C	150 °C	400 W	MOSFET (Metal Oxide)	78 nC	30 V	5 V	Through Hole	50 A
LITTELFUSE IXTH50N20	10 V	45 mOhm	N-Channel	TO-247-3	4600 pF	200 V	TO-247 (IXTH)	-55 °C	150 °C	300 W	MOSFET (Metal Oxide)	220 nC	20 V	4 V	Through Hole	50 A
LITTELFUSE IXTH50P10	10 V	55 mOhm	P-Channel	TO-247-3	4350 pF	100 V	TO-247 (IXTH)	-55 °C	150 °C	300 W	MOSFET (Metal Oxide)	140 nC	20 V	5 V	Through Hole	50 A
LITTELFUSE IXTH50P10	10 V	55 mOhm	P-Channel	TO-247-3	4350 pF	100 V	TO-247 (IXTH)	-55 °C	150 °C	300 W	MOSFET (Metal Oxide)	140 nC	20 V	5 V	Through Hole	50 A
LITTELFUSE IXTH50P085	10 V	55 mOhm	P-Channel	TO-247-3	4200 pF	85 V	TO-247 (IXTH)	-55 °C	150 °C	300 W	MOSFET (Metal Oxide)	150 nC	20 V	5 V	Through Hole	50 A
LITTELFUSE IXTH50N30	10 V	65 mOhm	N-Channel	TO-247-3	4400 pF	300 V	TO-247 (IXTH)	-55 °C	150 °C	400 W	MOSFET (Metal Oxide)	165 nC	30 V	4 V	Through Hole	50 A

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet

IXTH50P10 | Datasheet

Datasheet