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STFH12N105K5

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STMicroelectronics

N-CHANNEL 1050 V, 0.90 OHM TYP., 8 A MDMESH K5 POWER MOSFET IN A TO-220FP WIDE CREEPAGE PACKAGE

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DocumentsAN4337+14

STFH12N105K5

Active
STMicroelectronics

N-CHANNEL 1050 V, 0.90 OHM TYP., 8 A MDMESH K5 POWER MOSFET IN A TO-220FP WIDE CREEPAGE PACKAGE

Deep-Dive with AI

DocumentsAN4337+14

Technical Specifications

Parameters and characteristics for this part

SpecificationSTFH12N105K5
Current - Continuous Drain (Id) @ 25°C8 A
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs18.4 nC
Input Capacitance (Ciss) (Max) @ Vds559 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)29 W
Rds On (Max) @ Id, Vgs1 Ohm
Supplier Device PackageTO-220FP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 920$ 1.79

Description

General part information

STFH12N105K5 Series

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.