2N6316

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Microchip Technology

POWER BJT TO-66 ROHS COMPLIANT: YES

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2N6316

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Microchip Technology

POWER BJT TO-66 ROHS COMPLIANT: YES

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Description Specifications Series Pricing CAD Documents

Description

General part information

2N6316-Transistor Series

This family of 2N6315 and 2N6316 NPN transisitors are an excellent choice for un-tuned amplifier applications. They are also ideal for general purpose power switch and amplifier applications. Microchip also offers numerous other products to meet higher and lower power voltage regulation applications.

Technical Specifications

Parameters and characteristics for this part

Specification	2N6316

Current - Collector (Ic) (Max)	7 A
Current - Collector Cutoff (Max)	500 µA
DC Current Gain (hFE) (Min)	35
Mounting Type	Through Hole
Operating Temperature (Max)	200 °C
Operating Temperature (Min)	-65 °C
Package / Case	TO-66-2, TO-213AA
Package Name	TO-66 (TO-213AA)
Power - Max	90 W
Supplier Device Package	TO-66, TO-213AA
Transistor Type	NPN
Vce Saturation (Max)	2 V
Voltage - Collector Emitter Breakdown (Max)	80 V

2N6316-Transistor Series

Part	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Supplier Device Package	Current - Collector Cutoff (Max)	Transistor Type	Vce Saturation (Max)	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	DC Current Gain (hFE) (Min)	Package / Case	Power - Max	Current - Collector (Ic) (Max)
Microchip Technology 2N6316	-65 °C	200 °C	TO-66 (TO-213AA)	TO-213AA TO-66	500 µA	NPN	2 V	80 V	Through Hole	35	TO-213AA TO-66-2	90 W	7 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Product Change Notice EN

2N6315 and 2N6316