1N5408-G
ActiveComchip Technology
DIODE GEN PURP 1KV 3A DO27
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1N5408-G
ActiveComchip Technology
DIODE GEN PURP 1KV 3A DO27
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 1N5408-G |
|---|---|
| Current - Average Rectified (Io) | 3 A |
| Current - Reverse Leakage @ Vr | 5 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 125 °C |
| Operating Temperature - Junction [Min] | -65 C |
| Package / Case | DO-201AD, Axial |
| Speed | Standard Recovery >500ns |
| Speed | 200 mA |
| Supplier Device Package | DO-27 (DO-201AD) |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1000 V |
| Voltage - Forward (Vf) (Max) @ If [Max] | 950 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.29 | |
| 10 | $ 0.22 | |||
| 100 | $ 0.13 | |||
| 500 | $ 0.12 | |||
| Tape & Box (TB) | 1200 | $ 0.09 | ||
1N5408 Series
DIODE GEN PURP 1KV 3A DO27
| Part | Speed | Speed | Supplier Device Package | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Mounting Type | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If [Max] | Package / Case | Current - Average Rectified (Io) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Comchip Technology 1N5408-G | Standard Recovery >500ns | 200 mA | DO-27 (DO-201AD) | 125 °C | -65 C | Through Hole | 1000 V | 5 µA | 950 mV | DO-201AD, Axial | 3 A | Standard |
Description
General part information
1N5408 Series
Diode 1000 V 3A Through Hole DO-27 (DO-201AD)
Documents
Technical documentation and resources
No documents available